Datasheet

2001 Oct 10 3
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCX54 − 45 V
BCX55 − 60 V
BCX56 − 100 V
V
CEO
collector-emitter voltage open base
BCX54 − 45 V
BCX55 − 60 V
BCX56 − 80 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 1A
I
CM
peak collector current − 1.5 A
I
BM
peak base current − 0.2 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.3 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 94 K/W
R
th j-s
thermal resistance from junction to soldering point 14 K/W