Datasheet

2000 Jul 28 3
Philips Semiconductors Product specification
NPN general purpose transistor BCX19
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
2. V
BE
decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=20V −−100 nA
I
E
= 0; V
CB
=20V; T
j
= 150 °C −−5µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−100 nA
h
FE
DC current gain V
CE
= 1 V; note 1
I
C
= 100 mA 100 − 600
I
C
= 300 mA 70 −−
I
C
= 500 mA 40 −−
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA; note 2 −−620 mV
V
BE
base-emitter voltage I
C
= 500 mA; V
CE
= 1 V; notes 1 and 2 −−1.2 V
C
c
collector capacitance I
E
=I
e
= 0; V
CB
= 10 V; f = 1 MHz − 5 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 −−MHz