Datasheet

2000 Jul 28 2
Philips Semiconductors Product specification
NPN general purpose transistor BCX19
FEATURES
• High current (500 mA)
• Low voltage (45 V).
APPLICATIONS
• General purpose amplification
• Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
BCX19 U1∗
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base; I
C
=10mA − 45 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 1A
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C