Datasheet

2004 Jan 13 4
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV27; BCV47
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
BCV27 I
E
= 0; V
CBO
= 30 V − − 100 nA
BCV47 I
E
= 0; V
CBO
= 60 V − − 100 nA
I
EBO
emitter cut-off current I
E
= 0; V
EB
= 10 V − − 100 nA
h
FE
DC current gain V
CE
= 5 V; (see Fig.2)
BCV27 I
C
= 1 mA 4 000 − −
I
C
= 10 mA 1 0 000 − −
I
C
= 100 mA 2 0 000 − −
DC current gain V
CE
= 5 V; (see Fig.2)
BCV47 I
C
= 1 mA 2 000 − −
I
C
= 10 mA 4 000 − −
I
C
= 100 mA 10 000 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
= 0.1 mA − − 1 V
V
BEsat
base-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA − − 1.5 V
V
BEon
base-emitter on-state voltage I
C
= 10 mA; V
CE
= 5 V − − 1.4 V
f
T
transition frequency I
C
= 30 mA; V
CE
= 5 V; f = 100 MHz − 220 − MHz
handbook, full pagewidth
0
60000
80000
20000
40000
MGD837
10
−1
1
I
C
(mA)
h
FE
10 10
2
10
3
Fig.2 DC current gain; typical values.
V
CE
= 2 V.