Datasheet

2004 Jan 13 3
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV27; BCV47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCV27 − 40 V
BCV47 − 80 V
V
CES
collector-emitter voltage open base
BCV27 − 30 V
BCV47 − 60 V
V
EBO
emitter-base voltage open collector − 10 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 800 mA
I
B
base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W