Datasheet

2001 Oct 10 3
Philips Semiconductors Product specification
NPN medium power transistors BCP54; BCP55; BCP56
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 94 K/W
R
th j-s
thermal resistance from junction to soldering point 13 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=30V −−100 nA
I
E
= 0; V
CB
=30V; T
j
= 125 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−100 nA
h
FE
DC current gain I
C
= 5 mA; V
CE
=2V 63 −−
I
C
= 150 mA; V
CE
=2V 63 − 250
I
C
= 500 mA; V
CE
=2V 40 −−
h
FE
DC current gain I
C
= 150 mA; V
CE
=2V −
BCP55-10; 56-10 63 − 160
BCP54-16; 55-16; 56-16 100 − 250
V
CEsat
collector-emitter saturation voltage I
C
= 0.5 A; I
B
=50mA −−500 mV
V
BE
base-emitter voltage I
C
= 0.5 A; V
CE
=2V −−1V
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz − 130 − MHz
DC current gain ratio of the
complementary pairs
I
C
 = 150 mA; V
CE
 =2V −−1.6
h
FE1
h
FE2
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