Datasheet

2001 Oct 10 3
Philips Semiconductors Product specification
PNP medium power transistors BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 95 K/W
R
th j-s
thermal resistance from junction to soldering point 14 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V −−−100 nA
I
E
= 0; V
CB
= −30 V; T
j
= 125 °C −−−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5V −−−100 nA
h
FE
DC current gain V
CE
= −2 V; see Fig.2
I
C
= −5mA 63 −−
I
C
=−150 mA 63 − 250
I
C
= −500 mA 40 −−
h
FE
DC current gain I
C
= 150 mA; V
CE
= −2 V; see Fig.2
BCP53-10 63 − 160
BCP51-16; BCP52-16; BCP53-16 100 − 250
V
CEsat
collector-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA −−−0.5 V
V
BE
base-emitter voltage I
C
= −500 mA; V
CE
= −2V −−−1V
f
T
transition frequency I
C
= −10 mA; V
CE
= −5V;
f = 100 MHz
− 115 − MHz