Datasheet

2001 Oct 10 2
Philips Semiconductors Product specification
PNP medium power transistors BCP51; BCP52; BCP53
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Medium power (max. 1.3 W).
APPLICATIONS
• Audio, telephony and automotive applications
• Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCP51 −−45 V
BCP52 −−60 V
BCP53 −−100 V
V
CEO
collector-emitter voltage open base
BCP51 −−45 V
BCP52 −−60 V
BCP53 −−80 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−1A
I
CM
peak collector current −−1.5 A
I
BM
peak base current −−0.2 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.3 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C