Datasheet

BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 13 of 22
NXP Semiconductors
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
V
CE
= 2V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
T
amb
=25C
Fig 15. DC current gain as a function of collector
current; typical values
Fig 16. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= 2V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 100 C
I
C
/I
B
=10
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
Fig 17. Base-emitter voltage as a function of collector
current; typical values
Fig 18. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac688
100
200
300
h
FE
0
I
C
(A)
–10
–4
–10–1–10
–3
–10
–1
–10
–2
(1)
(2)
(3)
V
CE
(V)
0 −2.0−1.6−0.8 −1.2−0.4
006aaa230
−0.8
−0.4
−1.2
−1.6
I
C
(A)
0
−4.5
−9
−13.5
−18
−22.5
−27
−31.5
I
B
(mA) = −45 −40.5 −36
006aac689
–0.4
–0.8
–1.2
V
BE
(V)
0.0
I
C
(mA)
–10
–1
–10
4
–10
3
–1 –10
2
–10
(1)
(2)
(3)
006aac690
–1
–10
–1
–10
V
CEsat
(V)
–10
–2
I
C
(mA)
–10
–1
–10
4
–10
3
–1 –10
2
–10
(1)
(2)
(3)