Datasheet

BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 12 of 22
NXP Semiconductors
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
7. Characteristics
[1] Pulse test: t
p
 300 s;  = 0.02.
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
–1
10
–5
1010
–2
10
–4
10
2
10
–1
t
p
(s)
10
–3
10
3
1
0
duty cycle = 1
0.01
0.05
0.1
0.2
0.33
0.5
0.75
0.02
0.25
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 30 V; I
E
=0A - - 100 nA
V
CB
= 30 V; I
E
=0A;
T
j
= 150 C
--10 A
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 2V
I
C
= 5mA 63 - -
I
C
= 150 mA 63 - 250
I
C
= 500 mA
[1]
40 - -
DC current gain V
CE
= 2V
h
FE
selection -10 I
C
= 150 mA 63 - 160
h
FE
selection -16 I
C
= 150 mA 100 - 250
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA;
I
B
= 50 mA
[1]
--0.5 V
V
BE
base-emitter voltage V
CE
= 2V; I
C
= 500 mA
[1]
--1V
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
-15-pF
f
T
transition frequency V
CE
= 5V; I
C
= 50 mA;
f=100MHz
- 145 - MHz