Datasheet

2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859; BC860
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Notes
1. V
BEsat
decreases by about −1.7 mV/K with increasing temperature.
2. V
BE
decreases by about −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − −1 −15 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C − − −4 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V;
see
Figs 2 and 3
BC859B; BC860B 220 − 475
BC859C; BC860C 420 − 800
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA − −75 −300 mV
I
C
= −100 mA; I
B
= −5 mA − −250 −650 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA; note 1 − −700 − mV
I
C
= −100 mA; I
B
= −5 mA; note 1 − −850 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V; note 2 −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5 V; note 2 − − −820 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 4.5 − pF
C
e
emitter capacitance I
C
= I
c
= 0; V
EB
= −500 mV; f = 1 MHz − 10 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 30 Hz to 15 kHz
BC859B; BC860B;
BC859C;
BC860C
− − 4 dB
noise figure I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
BC859B; BC860B;
BC859C;
BC860C
− − 4 dB