Datasheet

2002 Feb 04 4
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
CHARACTERISTICS
T
amb
=25°C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
=0 −−1−15 nA
V
CB
= −30 V; I
E
=0;
T
j
= 150 °C
−−−4µA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
=0 −−−100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5V
BC856 125 − 475
BC857 125 − 800
BC856A; BC857A 125 − 250
BC856B; BC857B; BC858B 220 − 475
BC857C 420 − 800
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA −−75 −300 mV
I
C
= −100 mA; I
B
= −5 mA;
note 1
−−250 −650 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA −−700 − mV
I
C
= −100 mA; I
B
= −5 mA;
note 1
−−850 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5V −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5V −−−820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
=I
e
=0;
f = 1 MHz
− 4.5 − pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f = 100 MHz
100 −−MHz
F noise figure I
C
= −200 µA; V
CE
= −5V;
R
S
=2kΩ; f = 1 kHz;
B = 200 Hz
− 210dB