Datasheet

2002 Feb 04 3
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC856 −−80 V
BC857 −−50 V
BC858 −−30 V
V
CEO
collector-emitter voltage open base
BC856 −−65 V
BC857 −−45 V
BC858 −−30 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−100 mA
I
CM
peak collector current −−200 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 500 K/W