DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 12 2002 Feb 04
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 PINNING FEATURES • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − −1 −15 nA − − −4 µA − − −100 nA BC856 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B; BC858B 220 − 475 BC857C 420 − 800 VEB = −5 V; IC = 0 hFE DC current gain IC = −2 mA; VCE = −5 V VBE MAX.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT711 500 MGT712 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 400 (1) (1) −800 300 (2) −600 (2) 200 (3) −400 (3) 100 −200 0 −10−2 −10−1 −1 −10 0 −10−2 −102 −103 I C (mA) −10−1 BC857A; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857A; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT715 1000 MGT716 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 600 (2) (1) −600 400 200 0 −10−2 −10−1 (2) −400 (3) −200 −1 −10 (3) 0 −10−2 −102 −103 I C (mA) −10−1 BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 MGT719 1000 MGT720 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE (1) 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 0 −10−2 −200 −10−1 −1 −10 0 −10−1 −102 −103 I C (mA) −1 −10 −102 −103 I C (mA) BC857C; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC857C; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 NOTES 2002 Feb 04 10
Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 NOTES 2002 Feb 04 11
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