Datasheet

2002 Feb 04 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − −1 −15 nA
V
CB
= −30 V; I
E
= 0;
T
j
= 150 °C
− − −4 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V
BC856W 125 − 475
BC857W; BC858W 125 − 800
BC856AW; BC857AW 125 − 250
BC856BW; BC857BW 220 − 475
BC857CW 420 − 800
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −75 −300 mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −250 −600 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −700 − mV
I
C
= −100 mA; I
B
= −5 mA;
note
1
− −850 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5 V − − −820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− − 3 pF
C
e
emitter capacitance V
EB
= −0.5 V; I
C
= I
c
= 0;
f
= 1 MHz
− − 12 pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f
= 100 MHz
100 − − MHz
F noise figure I
C
= −200 μA; V
CE
= −5 V;
R
S
= 2 kΩ; f = 1 kHz;
B
= 200 Hz
− − 10 dB