Datasheet

1999 Apr 26 3
Philips Semiconductors Product specification
PNP general purpose double transistor BC857BS
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V −−−15 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C −−−5µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5V −−−100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V 200 − 450
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA −−−100 mV
I
C
= −100 mA; I
B
= −5 mA; note 1 −−−400 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA −−755 − mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5V −600 −655 −750 mV
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= −10 V; f = 1 MHz −−2.2 pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= −500 mV; f = 1 MHz − 10 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 100 −−MHz