Datasheet

2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 1 15 nA
V
CB
= 30 V; I
E
= 0;
T
j
= 150 °C
4 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 100 nA
h
FE
DC current gain I
C
= 2 mA; V
CE
= 5 V
BC856 125 475
BC857 125 800
BC856A; BC857A 125 250
BC856B; BC857B; BC858B 220 475
BC857C 420 800
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA 75 300 mV
I
C
= 100 mA; I
B
= 5 mA;
note
1
250 650 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA 700 mV
I
C
= 100 mA; I
B
= 5 mA;
note
1
850 mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 600 650 750 mV
I
C
= 10 mA; V
CE
= 5 V 820 mV
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0;
f
= 1 MHz
4.5 pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA;
f
= 100 MHz
100 MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B
= 200 Hz
2 10 dB