Datasheet

BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 7 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
= −5 V; T
amb
=25°C
Fig 7. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 9. Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
006aaa543
−1
−10
−1
−10
V
CEsat
(V)
−10
−2
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
I
C
(mA)
−1 −10
2
−10
006aaa545
10
2
10
3
f
T
(MHz)
10
V
CB
(V)
0 −10−8−4 −6−2
006aab623
4
6
2
8
10
C
c
(pF)
0
006aaa547
V
EB
(V)
0 −6−4−2
9
11
7
13
15
C
e
(pF)
5