Datasheet

BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 6 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
V
CE
= −5 V; T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6. Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
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200
400
600
h
FE
0
I
C
(mA)
−10
−2
−10
3
−10
2
−10
−1
−10−1
(1)
(2)
(3)
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V
CE
(V)
0 −10−8−4 −6−2
−0.08
−0.12
−0.04
−0.16
−0.20
I
C
(A)
0
−0.25
I
B
(mA) = −2.5
−0.5
−0.75
−1.0
−1.25
−1.5
−1.75
−2.0
−2.25
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−0.6
−0.8
−1
V
BE
(V)
−0.4
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
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I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−0.5
−0.9
−1.3
−0.3
−0.7
−1.1
V
BEsat
(V)
−0.1
(1)
(2)
(3)