Datasheet

BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 5 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
=0A - - −15 nA
V
CB
= −30 V; I
E
=0A;
T
j
= 150 °C
--−5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −6 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V
I
C
= −10 µA - 270 -
I
C
= −2 mA 200 290 450
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −55 −100 mV
I
C
= −100 mA; I
B
= −5mA - −200 −300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −755 −850 mV
I
C
= −100 mA; I
B
= −5mA - −900 - mV
V
BE
base-emitter voltage V
CE
= −5V
I
C
= −2mA −600 −650 −750 mV
I
C
= −10 mA - - −820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 2.3 - pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
= 0 A; f = 1 MHz
-10-pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f = 100 MHz
100 - - MHz
NF noise figure V
CE
= −5V;I
C
= −0.2 mA;
R
S
=2kΩ;
f = 10 Hz to 15.7 kHz
- 1.6 - dB
V
CE
= −5V;I
C
= −0.2 mA;
R
S
=2kΩ; f = 1 kHz;
B = 200 Hz
- 2.9 - dB