Datasheet

1999 Apr 08 3
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=30V −−15 nA
I
E
= 0; V
CB
=30V; T
j
= 150 °C −−5µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−100 nA
h
FE
DC current gain I
C
=10µA; V
CE
=5V;
see Figs 2 and 3
BC849B; BC850B − 240 −
BC849C; BC850C − 450 −
DC current gain I
C
= 2 mA; V
CE
=5V;
see Figs 2 and 3
BC849B; BC850B 200 290 450
BC849C; BC850C 420 520 800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − 90 250 mV
I
C
= 100 mA; I
B
=5mA − 200 600 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA; note 1 − 700 − mV
I
C
= 100 mA; I
B
= 5 mA; note 1 − 900 − mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V; note 2 580 660 700 mV
I
C
= 10 mA; V
CE
= 5 V; note 2 −−770 mV
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz − 2.5 − pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= 500 mV; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 −−MHz
F noise figure I
C
= 200 µA; V
CE
=5V; R
S
=2kΩ;
f = 10 Hz to 15.7 kHz
−−4dB
I
C
= 200 µA; V
CE
=5V; R
S
=2kΩ;
f = 1 kHz; B = 200 Hz
−−4dB