Datasheet

BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 20 August 2012 5 of 18
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
 300 s;  = 0.02.
[2] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 C
--5A
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
=10A
h
FE
group A - 90 -
h
FE
group B - 150 -
h
FE
group C - 270 -
DC current gain V
CE
=5V; I
C
=2mA 110 - 800
h
FE
group A 110 180 220
h
FE
group B 200 290 450
h
FE
group C 420 520 800
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - 90 200 mV
I
C
=100mA; I
B
=5mA
[1]
- 200 400 mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA
[2]
- 700 - mV
I
C
=100mA; I
B
=5mA
[2]
- 900 - mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[2]
580 660 700 mV
I
C
=10mA; V
CE
=5V - - 770 mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f=100MHz
100--MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--1.5pF
C
e
emitter capacitance V
EB
=0.5V; I
C
=i
c
=0A;
f=1MHz
-11-pF
NF noise figure I
C
=200A; V
CE
=5V;
R
S
=2k; f = 1 kHz;
B=200Hz
-210dB