Datasheet

2002 Feb 04 4
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
CHARACTERISTICS
T
amb
=25°C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
=30V; I
E
=0 −−15 nA
V
CB
=30V; I
E
=0;
T
j
= 150 °C
−−5µA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
=0 −−100 nA
h
FE
DC current gain I
C
=10µA; V
CE
=5V
BC846A; BC847A − 90 −
BC846B; BC847B; BC848B − 150 −
BC847C − 270 −
DC current gain I
C
= 2 mA; V
CE
=5V
BC846 110 − 450
BC847 110 − 800
BC846A; BC847A 110 180 220
BC846B; BC847B; BC848B 200 290 450
BC847C 420 520 800
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 90 250 mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
− 200 600 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 700 − mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
− 900 − mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 580 660 700 mV
I
C
= 10 mA; V
CE
=5V −−770 mV
C
c
collector capacitance V
CB
=10V; I
E
=I
e
=0;
f = 1 MHz
− 2.5 − pF
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f = 100 MHz
100 −−MHz
F noise figure I
C
= 200 µA; V
CE
=5V;
R
S
=2kΩ; f = 1 kHz;
B = 200 Hz
− 210dB