DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 23 2002 Feb 04
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PINNING FEATURES • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT − − 15 nA − − 5 µA − − 100 nA BC846A; BC847A − 90 − BC846B; BC847B; BC848B − 150 − − 270 − BC846 110 − 450 BC847 110 − 800 BC846A; BC847A 110 180 220 BC846B; BC847B; BC848B 200 290 450 BC847C 420 520 800 IC = 10 mA; IB = 0.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT723 400 MGT724 1200 BE (mV) 1000 handbook, halfpage handbook, halfpage V hFE (1) 300 (1) 800 (2) (2) 200 600 (3) 400 (3) 100 200 0 10−1 1 10 102 0 10−1 103 1 10 102 I C (mA) BC846A; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC846A; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT727 600 MGT728 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE (1) 500 (1) 400 800 (2) (2) 300 600 200 400 (3) 100 0 10−1 1 10 (3) 200 102 0 10−2 103 10−1 1 10 I C (mA) BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 MGT731 1200 MGT732 1200 VBE (mV) 1000 handbook, halfpage handbook, halfpage hFE 1000 (1) 800 (1) 800 (2) (2) 600 400 600 200 0 10−1 (3) 400 (3) 200 1 10 102 0 10−2 103 10−1 1 10 I C (mA) 102 103 I C (mA) BC847C; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. BC847C; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 NOTES 2002 Feb 04 10
Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 NOTES 2002 Feb 04 11
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