Datasheet

1999 Apr 28 3
Philips Semiconductors Product specification
NPN general purpose double transistor BC847BS
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector cut-off current I
E
= 0; V
CB
=30V −−15 nA
I
E
= 0; V
CB
=30V; T
j
= 150 °C −−5µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−100 nA
h
FE
DC current gain I
C
= 2 mA; V
CE
= 5 V 200 − 450
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA −−100 mV
I
C
= 100 mA; I
B
= 5 mA; note 1 −−300 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − 755 − mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 580 655 700 mV
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz −−1.5 pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= 500 mV; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 −−MHz