Datasheet

BC847BS_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 18 February 2009 5 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0.20
0
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A --15nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 2 mA 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 100 mV
I
C
= 100 mA; I
B
=5mA
[1]
- - 300 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - 755 - mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V 580 655 700 mV
C
c
collector capacitance I
E
=i
e
= 0 A; V
CB
=10V;
f=1MHz
- - 1.5 pF
C
e
emitter capacitance I
C
=i
c
= 0 A; V
EB
= 0.5 V;
f=1MHz
-11-pF
f
T
transition frequency I
C
= 10 mA; V
CE
=5V;
f = 100 MHz
100 - - MHz