Datasheet

BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
[2] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= −20 V - - −100 nA
I
E
= 0 A; V
CB
= −20 V;
T
j
=150°C
--−5 μA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= −5 V - - −100 nA
h
FE
DC current gain I
C
= −100 mA; V
CE
= −1 V
[1]
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W;
BC327-16
100 - 250
BC807-25; BC807-25W;
BC327-25
160 - 400
BC807-40; BC807-40W;
BC327-40
250 - 600
h
FE
DC current gain I
C
= −500 mA; V
CE
= −1 V
[1]
40 - -
V
CEsat
collector-emitter saturation
voltage
I
C
= −500 mA; I
B
= −50 mA
[1]
--−700 mV
V
BE
base-emitter voltage I
C
= −500 mA; V
CE
= −1 V
[2]
--−1.2 V
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= −10 V;
f=1MHz
-5- pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V;
f=100MHz
80 - - MHz