Datasheet

1999 Apr 08 3
Philips Semiconductors Product specification
PNP general purpose transistor BC807
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
2. V
BE
decreases by about −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −20 V −−−100 nA
I
E
= 0; V
CB
= −20 V; T
j
= 150 °C −−−5µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5V −−−100 nA
h
FE
DC current gain I
C
= −100 mA; V
CE
= −1 V; note 1
see Figs 2, 3 and 4
BC807 100 − 600
BC807-16 100 − 250
BC807-25 160 − 400
BC807-40 250 − 600
h
FE
DC current gain I
C
= −500 mA; V
CE
= −1 V; note 1 40 −−
V
CEsat
collector-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA; note 1 −−−700 mV
V
BE
base-emitter voltage I
C
= −500 mA; V
CE
= −1V;
notes 1 and 2
−−−1.2 V
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= −10 V; f = 1 MHz − 9 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 80 −−MHz