Datasheet

1999 Apr 08 2
Philips Semiconductors Product specification
PNP general purpose transistor BC807
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
MARKING
Note
1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia.
TYPE NUMBER MARKING CODE
(1)
BC807 5D∗
BC807-16 5A∗
BC807-25 5B∗
BC807-40 5C∗
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−50 V
V
CEO
collector-emitter voltage open base; I
C
= −10 mA −−45 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−500 mA
I
CM
peak collector current −−1A
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C