Datasheet

1996 Sep 17 6
Philips Semiconductors Product specification
General purpose double diode BAV23
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
10
2
10
200
0
MBG381
100
T
j
(
o
C)
I
R
(µA)
1
10
2
10
1
(1) (2)
(1) V
R
= 200 V; maximum values.
(2) V
R
= 200 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
=25°C.
handbook, halfpage
04862
1.0
0.8
0.2
0.6
0.4
MBG447
V
R
(V)
C
d
(pF)
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) I
R
= 3 mA.
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF S
R = 50
S
Ω
I
F
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881