Datasheet

1996 Sep 17 4
Philips Semiconductors Product specification
General purpose double diode BAV23
ELECTRICAL CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 100 mA − 1.0 V
I
F
= 200 mA − 1.25 V
V
F
forward voltage series connection; see Fig.3
I
F
= 100 mA − 2.0 V
I
F
= 200 mA − 2.5 V
I
R
reverse current see Fig.5
V
R
= 200 V − 100 nA
V
R
= 200 V; T
j
= 150 °C − 100 µA
I
R
reverse current series connection −
V
R
= 400 V − 100 nA
V
R
= 400 V; T
j
= 150 °C − 100 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 − 5pF
series connection; f = 1 MHz;
V
R
= 0; see Fig.6
− 2.5 pF
t
rr
reverse recovery time when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100 Ω;
measured at I
R
= 3 mA; see Fig.7
− 50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 360 K/W
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W