Datasheet

1996 Sep 17 3
Philips Semiconductors Product specification
General purpose double diode BAV23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 250 V
V
RRM
repetitive peak reverse voltage series connection 500 V
V
R
continuous reverse voltage − 200 V
V
R
continuous reverse voltage series connection − 400 V
I
F
continuous forward current single diode loaded; see Fig.2;
note 1
− 225 mA
double diode loaded; see Fig.2;
note 1
− 125 mA
I
FRM
repetitive peak forward current − 625 mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
total power dissipation T
amb
=25°C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C