DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of April 1996 1996 Sep 17
Philips Semiconductors Product specification General purpose double diode BAV23 FEATURES DESCRIPTION • Small plastic SMD package The BAV23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V PINNING • Repetitive peak reverse voltage: max.
Philips Semiconductors Product specification General purpose double diode BAV23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT VRRM repetitive peak reverse voltage VRRM repetitive peak reverse voltage VR continuous reverse voltage VR continuous reverse voltage series connection − 400 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 225 mA double diode loaded; see Fig.
Philips Semiconductors Product specification General purpose double diode BAV23 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF VF IR IR Cd trr PARAMETER forward voltage forward voltage reverse current reverse current diode capacitance reverse recovery time CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V IF = 100 mA − 2.0 V IF = 200 mA − 2.5 V series connection; see Fig.3 see Fig.
Philips Semiconductors Product specification General purpose double diode BAV23 GRAPHICAL DATA MBD033 300 MBG384 600 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 400 single diode loaded double diode loaded 200 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.
Philips Semiconductors Product specification General purpose double diode BAV23 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 10 MBG447 1.0 handbook, halfpage (2) 0.6 1 0.4 10 2 0 100 Tj (oC) 0.2 0 200 2 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature.
Philips Semiconductors Product specification General purpose double diode BAV23 PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 2 0 0.1 0.88 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. Fig.8 SOT143. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development.
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