Datasheet

2000 May 25 3
Philips Semiconductors Product specification
Schottky barrier diode BAT86
ELECTRICAL CHARACTERISTICS
T
amb
=25°C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 0.1 mA 300 mV
I
F
= 1 mA 380 mV
I
F
= 10 mA 450 mV
I
F
= 30 mA 600 mV
I
F
= 100 mA 900 mV
I
R
reverse current V
R
= 40V; see Fig.4; note 1 5 µA
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA; see Fig.6
4ns
C
d
diode capacitance f = 1 MHz; V
R
= 1 V; see Fig.5 8 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W