Datasheet

2000 May 25 2
Philips Semiconductors Product specification
Schottky barrier diode BAT86
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM193
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 50 V
I
F
continuous forward current − 200 mA
I
F(AV)
average forward current PCB mounting, lead length = 4 mm;
V
RWM
= 25 V; a = 1.57; δ = 0.5;
T
amb
=50°C; see Fig.2
− 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1s;δ≤0.5 − 500 mA
I
FSM
non-repetitive peak forward current t
p
≤ 10 ms − 5A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
T
amb
operating ambient temperature −65 +125 °C