Datasheet

BAT754_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 9 October 2012 4 of 10
NXP Semiconductors
BAT754 series
Schottky barrier diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb
=25C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
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V
F
(V)
0.0 1.20.80.4
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10
3
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F
(mA)
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(2)
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V
R
(V)
C
d
(pF)
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