Datasheet

1PS76SB21_BAT721_SER_6 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 06 — 21 December 2006 4 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
1PS76SB21 - - 450 K/W
BAT721 - - 500 K/W
BAT721A - - 500 K/W
BAT721C - - 500 K/W
BAT721S - - 500 K/W
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
=10mA
[1]
- - 300 mV
I
F
= 100 mA
[1]
- - 420 mV
I
F
= 200 mA
[1]
- - 550 mV
I
R
reverse current V
R
=30V --15µA
V
R
= 30 V; T
j
= 100 °C --3 mA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz - 40 50 pF