Datasheet

BAT720 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 14 November 2012 3 of 10
NXP Semiconductors
BAT720
Schottky barrier diode
7. Characteristics
[1] Pulse test: t
p
 300 s; 0.02.
Table 7. Characteristics
T
j
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=500mA
[1]
- - 550 mV
I
R
reverse current V
R
=35V
[1]
- - 100 A
V
R
=35V; T
j
=100C
[1]
--10mA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V 60 - 90 pF
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mbk578
V
F
(mV)
I
F
(mA)
150
250 350 450 550
10
3
10
2
10
10
−1
1
(1)
(2)
(3)
006aac893
10
-2
10
-1
1
10
I
R
(mA)
10
-3
V
R
(V)
0403010 20
(1)
(2)
(3)