Datasheet

1999 May 06 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage
−
30 V
I
F
continuous forward current −
200 mA
I
FRM
repetitive peak forward current t
p
≤ 1s;δ≤0.5
−
300 mA
I
FSM
non-repetitive peak forward current t
p
<10ms
−
600 mA
P
tot
total power dissipation (per package)
T
amb
≤ 25 °C
−
230 mW
T
stg
storage temperature
−65
+150 °C
T
j
junction temperature
−
125 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.6
I
F
= 0.1 mA
240 mV
I
F
=1mA
320 mV
I
F
=10mA
400 mV
I
F
=30mA
500 mV
I
F
= 100 mA
800 mV
I
R
reverse current V
R
= 25 V; see Fig.7
2
µA
t
rr
reverse recovery time when switched from I
F
=10mA
to I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA;
see Fig.9
5ns
C
d
diode capacitance f = 1 MHz; V
R
= 1 V; see Fig.8
10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 500 K/W