Datasheet

2002 Mar 04 3
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage − 30 V
I
F
continuous forward current − 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 − 300 mA
I
FSM
non-repetitive peak forward current t
p
< 10 ms − 600 mA
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C − 230 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.3
I
F
= 0.1 mA 240 mV
I
F
= 1 mA 320 mV
I
F
= 10 mA 400 mV
I
F
= 30 mA 500 mV
I
F
= 100 mA 800 mV
I
R
reverse current V
R
= 25 V; see Fig.4 2 μA
t
rr
reverse recovery time when switched from I
F
= 10 mA
to I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA;
see
Fig.6
5 ns
C
d
diode capacitance f = 1 MHz; V
R
= 1 V; see Fig.5 10 pF