Datasheet

BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 4 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
7. Characteristics
[1] Pulse test: t
p
 300 s; 0.02.
[2] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 ; measured at I
R
=1mA.
Table 7. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 0.1 mA - 175 200 mV
I
F
= 10 mA - 315 350 mV
I
F
=10mA; T
j
= 40 C - - 470 mV
I
F
= 50 mA - 415 475 mV
I
F
=50mA; T
j
= 40 C - - 560 mV
I
F
= 250 mA - 710 850 mV
I
R
reverse current
[1]
V
R
= 1.5 V - 0.2 0.5 A
V
R
= 1.5 V; T
j
=60C --12A
V
R
=10V - 0.3 0.8 A
V
R
=10V; T
j
=60C --20A
V
R
=50V - 0.7 2 A
V
R
=50V; T
j
=60C --44A
V
R
=75V - 1 4 A
V
R
=75V; T
j
=60C --80A
V
R
=100V - 2 9 A
V
R
=100V; T
j
=60C - - 120 A
V
R
=100V; T
j
=85C - - 600 A
C
d
diode capacitance f = 1 MHz
V
R
=0V --39pF
V
R
=1V --21pF
t
rr
reverse recovery time
[2]
-5.9-ns