Datasheet

BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 3 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 320 K/W
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 mA - - 240 mV
I
F
= 1 mA - - 320 mV
I
F
= 10 mA - - 400 mV
I
F
= 30 mA - - 500 mV
I
F
= 100 mA - - 800 mV
I
R
reverse current V
R
=25V
[1]
--2.3μA
C
d
diode capacitance V
R
=1V; f=1MHz --10pF