Datasheet

BAS85 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 10 September 2010 2 of 10
NXP Semiconductors
BAS85
Schottky barrier diode
2. Pinning information
[1] The marking band indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
[1]
2 anode
ka
sym00
1
12
Table 3. Ordering information
Type number Package
Name Description Version
BAS85 - hermetically sealed glass surface-mounted package;
2 connectors
SOD80C
Table 4. Marking codes
Type number Marking code
BAS85 marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
F(AV)
average forward current
[1]
-200mA
I
FRM
repetitive peak forward
current
t
p
≤ 1s; δ≤0.5 - 300 mA
I
FSM
non-repetitive peak
forward current
t
p
=10ms - 5 A
T
j
junction temperature - 125 °C
T
amb
ambient temperature −65 +125 °C
T
stg
storage temperature −65 +150 °C