Datasheet

BAS45AL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 — 6 August 2010 5 of 11
NXP Semiconductors
BAS45AL
Low-leakage diode
8. Test information
V
R
= 125 V f = 1 MHz; T
j
=25°C
Fig 4. Reverse current as a function of junction
temperature
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
mbd456
10
4
10
3
10
2
10
10
−1
150500 100
1
I
R
(nA)
T
j
(°C)
typ
max
mbg524
01020155
3
2
0
1
V
R
(V)
C
d
(pF)
Fig 6. Reverse recovery time test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+ I
F
× R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881