Datasheet

BAS45AL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 — 6 August 2010 3 of 11
NXP Semiconductors
BAS45AL
Low-leakage diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 Ω; measured at I
R
=1mA.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-t)
thermal resistance from
junction to tie-point
- - 300 K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 375 K/W
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 1 mA - - 780 mV
I
F
= 10 mA - - 860 mV
I
F
= 100 mA - - 1000 mV
I
R
reverse current E
max
=100lx
V
R
= 125 V - - 1 nA
V
R
=30V; T
j
= 125 °C - - 300 nA
V
R
= 125 V; T
j
=125°C - - 500 nA
V
R
= 125 V; T
j
=150°C--2μA
C
d
diode capacitance V
R
=0V; f=1MHz --4pF
t
rr
reverse recovery time
[1]
-1.5-μs