Datasheet

BAS45AL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 — 6 August 2010 2 of 11
NXP Semiconductors
BAS45AL
Low-leakage diode
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T
j
=25°C prior to surge.
Table 3. Ordering information
Type number Package
Name Description Version
BAS45AL - hermetically sealed glass surface-mounted package;
2 connectors
SOD80C
Table 4. Marking codes
Type number Marking code
BAS45AL marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-125V
V
R
reverse voltage - 125 V
I
F
forward current
[1]
-250mA
I
FRM
repetitive peak forward
current
-625mA
I
FSM
non-repetitive peak
forward current
square wave
[2]
t
p
=1μs-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-400mW
T
j
junction temperature - 175 °C
T
stg
storage temperature −65 +175 °C