Datasheet

ManualsBrandsNXP ManualsDiodesSmall Signal Diode 250mA 125V SOD-80C

1. Product profile

1.1 General description

Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

 Continuous reverse voltage: max. 125 V

 Repetitive peak forward current: max. 625 mA

 Low reverse current: max. 1 nA

 Switching time: typ. 1.5 μs

1.3 Applications

 Low leakage current applications

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

2. Pinning information

[1] The marking band indicates the cathode.

BAS45AL

Low-leakage diode

Rev. 5 — 6 August 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

forward current

[1]

--250mA

reverse voltage - - 125 V

forward voltage I

= 100 mA - - 1000 mV

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode

[1]

2 anode

006aab04

Summary of content (11 pages)

PAGE 1
BAS45AL Low-leakage diode Rev. 5 — 6 August 2010 Product data sheet 1. Product profile 1.1 General description Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA Switching time: typ. 1.5 μs 1.3 Applications Low leakage current applications 1.
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BAS45AL NXP Semiconductors Low-leakage diode 3. Ordering information Table 3. Ordering information Type number BAS45AL Package Name Description Version - hermetically sealed glass surface-mounted package; 2 connectors SOD80C 4. Marking Table 4. Marking codes Type number Marking code BAS45AL marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BAS45AL NXP Semiconductors Low-leakage diode 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-t) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient [1] Conditions in free air [1] Min Typ Max Unit - - 300 K/W - - 375 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified.
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BAS45AL NXP Semiconductors Low-leakage diode mbg522 300 mbg523 300 IF (mA) IF (mA) (1) 200 200 100 100 (2) (3) 0 0 0 100 Tamb (°C) 0 200 0.5 1.0 VF (V) 1.5 (1) Tj = 150 °C; typical values FR4 PCB, standard footprint (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig 1. Forward current as a function of ambient temperature; derating curve Fig 2.
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BAS45AL NXP Semiconductors Low-leakage diode mbd456 104 mbg524 3 IR (nA) Cd (pF) 103 2 max 102 typ 10 1 1 10−1 0 50 100 Tj (°C) 0 150 0 10 15 VR (V) 20 f = 1 MHz; Tj = 25 °C VR = 125 V Fig 4. 5 Reverse current as a function of junction temperature Fig 5. Diode capacitance as a function of reverse voltage; typical values 8. Test information tr RS = 50 Ω V = VR + IF × RS tp t D.U.T.
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BAS45AL NXP Semiconductors Low-leakage diode 9. Package outline 0.3 0.3 1.60 1.45 3.7 3.3 Dimensions in mm Fig 7. 06-03-16 Package outline SOD80C 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BAS45AL NXP Semiconductors Low-leakage diode 11. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) Fig 8. sod080c Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 9. BAS45AL Product data sheet Wave soldering footprint SOD80C All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 © NXP B.
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BAS45AL NXP Semiconductors Low-leakage diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS45AL v.5 20100806 Product data sheet - BAS45AL_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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BAS45AL NXP Semiconductors Low-leakage diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BAS45AL NXP Semiconductors Low-leakage diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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BAS45AL NXP Semiconductors Low-leakage diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . .