Datasheet

BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 3 of 11
NXP Semiconductors
BAS32L
High-speed switching diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] T
j
=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 Ω; measured at I
R
=1mA.
[2] When switched from I
F
=50mA; t
r
=20ns.
P
tot
total power dissipation T
amb
=25°C
[1]
-500mW
T
j
junction temperature - 200 °C
T
amb
ambient temperature −65 +200 °C
T
stg
storage temperature −65 +200 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--350K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--300K/W
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=5mA 620- 750mV
I
F
= 100 mA - - 1000 mV
I
F
=100mA; T
j
=100°C- - 930mV
I
R
reverse current V
R
=20V - - 25 nA
V
R
=75V - - 5 μA
V
R
=20V; T
j
=150°C--50μA
V
R
=75V; T
j
=150°C--100μA
C
d
diode capacitance V
R
=0V; f=1MHz - - 2 pF
t
rr
reverse recovery
time
[1]
--4ns
V
FR
forward recovery
voltage
[2]
--2.5V