Datasheet

ManualsBrandsNXP ManualsDiodesSmall Signal Diode 200mA 100V SOD-80C

1. Product profile

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

 High switching speed: t

≤ 4ns

 Reverse voltage: V

≤ 75 V

 Repetitive peak reverse voltage: V

RRM

≤ 100 V

 Repetitive peak forward current: I

FRM

≤ 450 mA

 Small hermetically sealed glass SMD package

1.3 Applications

 High-speed switching

 Reverse polarity protection

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] When switched from I

= 10 mA to I

=10mA; R

= 100 Ω; measured at I

=1mA.

BAS32L

High-speed switching diode

Rev. 7 — 20 January 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

forward current

[1]

--200mA

FRM

repetitive peak forward

current

--450mA

reverse voltage - - 75 V

forward voltage I

= 100 mA - - 1000 mV

reverse recovery time

[2]

--4ns

Summary of content (11 pages)

PAGE 1
BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.
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BAS32L NXP Semiconductors High-speed switching diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] k a 2 1 006aab040 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes 4.
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BAS32L NXP Semiconductors High-speed switching diode Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tamb = 25 °C - 500 mW Tj junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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BAS32L NXP Semiconductors High-speed switching diode mbg451 300 mbg464 600 IF (mA) IF (mA) 200 400 (1) (2) (3) 200 100 0 0 0 100 0 200 Tamb (°C) 1 VF (V) 2 (1) Tj = 175 °C; typical values FR4 PCB, standard footprint (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig 1. Forward current as a function of ambient temperature; derating curve Fig 2.
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BAS32L NXP Semiconductors High-speed switching diode mgd004 1.2 Cd (pF) 1.0 0.8 0.6 0.4 0 10 20 VR (V) f = 1 MHz; Tj = 25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.
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BAS32L NXP Semiconductors High-speed switching diode 9. Package outline 0.3 0.3 1.60 1.45 3.7 3.3 Dimensions in mm Fig 8. 06-03-16 Package outline SOD80C 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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BAS32L NXP Semiconductors High-speed switching diode 11. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) Fig 9. sod080c Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 10. Wave soldering footprint SOD80C BAS32L Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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BAS32L NXP Semiconductors High-speed switching diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS32L v.7 20110120 Product data sheet - BAS32L v.6 Modifications: • • Table 4 “Marking codes”: amended Section 13 “Legal information”: updated BAS32L v.6 20081029 Product data sheet - BAS32L v.5 BAS32L v.5 20080103 Product data sheet - BAS32L v.4 BAS32L v.4 20050322 Product data sheet - BAS32L v.3 BAS32L v.
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BAS32L NXP Semiconductors High-speed switching diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BAS32L NXP Semiconductors High-speed switching diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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BAS32L NXP Semiconductors High-speed switching diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . .