Datasheet

2004 Jan 26 2
NXP Semiconductors Product data sheet
General purpose diode BAS321
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A7
The marking bar indicates the cathode.
handbook, halfpage
12
MAM406
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BAS321 plastic surface mounted package; 2 leads SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage 250 V
V
R
continuous reverse voltage 200 V
I
F
continuous forward current see Fig.2; note 1 250 mA
I
FRM
repetitive peak forward current t
p
< 0.5 ms; δ ≤ 0.25 625 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 µs 9 A
t = 100 µs 3 A
t = 10 ms 1.7 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 300 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C